Ritsu Katayama Naganuma profile
プロフィール
| 氏名（ふりがな） | 長沼（片山）律 (ながぬま（かたやま）りつ) |
| 連絡先 | E-mail: katayama[at]biofet.t.u-tokyo.ac.jp |
発表論文
- Ritsu Katayama and *Toshiya Sakata,
“Effect of surface modification on fundamental electrical characteristics of solution-gated indium tin oxide-based thin-film transistor fabricated by one-step sputtering”
Langmuir, 39, (2023), 4282-4290.
(DOI: acs.langmuir.2c03225)
- Ritsu Katayama and *Toshiya Sakata,
“Simple Fabrication Method for Solution-gated One-piece Transistors for Biosensing Applications”
ECS Trans., 111(3), (2023), 37-43.
(DOI: 10.1149/11103.0037ecst) - Arisa Nishimura, Ritsu Katayama, and *Toshiya Sakata, “Effects of surface oxygen vacancies and hydroxy groups on electrical characteristics in solution-gated one-piece indium-tin-oxide-based field-effect transistors” , Langmuir, 41(1), (2025), 607-613. (DOI:10.1021/acs.langmuir.4c03860)
- Ritsu Katayama, Xianqi Dong, and *Toshiya Sakata, “Steep Subthreshold Slope in Solution-gated Indium–tin–oxide-based One-piece Thin-film Transistor Enables Highly Sensitive Biosensing” ACS Applied Electronic Materials, 7(5), (2025), 1862-1870. (DOI:10.1021/acsaelm.4c02158)
